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  Datasheet File OCR Text:
 Trigger Devices
MA2B001
Silicon planar type trigger device
Unit : mm
Thyristor TRIAC trigger circuit
0.56 max.
* Satisfactory symmetry of VBO * Large VO and small IBO
I Absolute Maximum Ratings Ta = 25C
Parameter Average total power dissipation Peak current*1 Operating ambient temperature*2 Symbol P(AV) IPM Topr Tstg Rating 150 2.0 100 -55 to +125 Unit mW A C C
4.5 max.
24 min.
I Features
1.95 max. 24 min.
Storage temperature
Note) *1 : Ta < 50C, t = 10 s, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation
DO-35 Package
I Electrical Characteristics Ta = 25C 3C
Parameter Breakover current Breakover voltage*1 Output voltage*1 Symbol IBO VBO VO T.C.(VBO) VBO *2 : Symmetry of VBO V = VBO I = IBO 28 4.0 7.0 0.1 3.5 Conditions Min Typ Max 50 36 Unit A V V %/C V
Temperature coefficient of breakover voltage Breakover voltage deviation*2
Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Measurement of VBO and VO
VBO
30 k 70 k
VO 100 Vrms 0.068 F
20
VBO' VBO
Amp.
Color indication (Green)
1
MA2B001
VBO Ta
50 45
16 14
Trigger Devices
VO Ta
1 000 800 Ta = 25C
IBO VBO
Breakover voltage VBO (V)
Breakover current IBO (A)
40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160
2 0
Output voltage VO (V)
12 10 8 6 4
600 400 200 0 200 400 600 800 1 000
0
20
40
60
80 100 120 140 160
40 30 20 10 0 10 20 30 40
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Breakover voltage VBO (V)
VO RL
14 12 Ta = 25C
Output voltage VO (V)
10 8 6 4 2
0 0.01
0.05 0.1
0.5 1
5 10
Load resistance RL (k)
2


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